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| (R) MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 1 s APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO VEBO IC IB P tot Tstg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value MJD3055 MJD2955 70 60 5 10 6 20 -65 to 150 150 Unit V V V A A W o C o C For PNP type voltage and current values are negative. February 2002 1/6 MJD2955 / MJD3055 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I CBO I CEO IEBO Parameter Test Conditions T j = 150 o C T j = 150 o C Min. Typ. Max. 20 2 20 2 50 0.5 60 Unit A mA A mA A mA V Collector Cut-off V CE = 70 V Current (V BE = -1.5 V) V CE = 70 V Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) V CB = 70 V V CB = 70 V V CE = 30 V V EB = 5 V I C = 30 mA V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) VCE(sat) V BE(on) h FE fT Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency IC = 4 A I C = 10 A IC = 4 A IC = 4 A I C = 10 A I C = 0.5 A I B = 0.4 A I B = 3.3 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V f = 500 KHz 20 5 2 1.1 8 1.8 100 V V V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP type voltage and current values are negative. Safe Operating Area Derating Curves 2/6 MJD2955 / MJD3055 DC Current Gain (NPN type) DC Current Gain (PNP type) DC Transconductance (NPN type) DC Transconductance (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/6 MJD2955 / MJD3055 Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) 4/6 MJD2955 / MJD3055 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 DIM. P032P_B 5/6 MJD2955 / MJD3055 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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